Транзистор: IGBT; 1,2кВ; 20А; 170Вт; TO247; 0,94мДж Технические параметры
- Case: TO247
- Collector current: 20A
- Collector-emitter saturation voltage: 1.54V
- Collector-emitter voltage: 1.2kV
- Gate - emitter voltage: ±30V
- Gate charge: 67.5нКл
- Kind of package: tube
- Manufacturer: AOS
- Mounting: THT
- Power dissipation: 170W
- Pulsed collector current: 80A
- Turn-off switching energy: 0.94mJ
- Turn-off time: 423ns
- Type of transistor: IGBT