Транзистор: N-MOSFET; полевой; 60В; 400мА; 500мВт; CST3C Технические параметры
- Case: CST3C
- Channel kind: enhanced
- Drain current: 400mA
- Drain-source voltage: 60V
- Gate charge: 0.39нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 1.75Ω
- Polarisation: unipolar
- Power dissipation: 500mW
- Type of transistor: N-MOSFET