Транзистор: N-MOSFET; полевой; 30В; 100мА; 100мВт; SC75 Технические параметры
- Case: SC75
- Channel kind: enhanced
- Drain current: 100mA
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 6Ω
- Polarisation: unipolar
- Power dissipation: 100mW
- Type of transistor: N-MOSFET