Транзистор: IGBT; 900В; 60А; 170Вт; TO3P Технические параметры
- Case: TO3P
- Collector current: 60A
- Collector-emitter voltage: 900V
- Gate - emitter voltage: ±25V
- Manufacturer: NTE
- Mounting: THT
- Power dissipation: 170W
- Pulsed collector current: 120A
- Turn-off time: 600ns
- Turn-on time: 460ns
- Type of transistor: IGBT
