Транзистор: IGBT; 600В; 25А; 150Вт; TO3P Технические параметры
- Case: TO3P
- Collector current: 25A
- Collector-emitter voltage: 600V
- Gate - emitter voltage: ±20V
- Manufacturer: NTE
- Mounting: THT
- Power dissipation: 150W
- Pulsed collector current: 50A
- Turn-off time: 500ns
- Turn-on time: 400ns
- Type of transistor: IGBT
