Транзистор: IGBT; 2,5кВ; 4А; 100Вт; SMPD; Топология: Н мост Технические параметры
- Case: SMPD
- Collector current: 4A
- Collector-emitter voltage: 2.5kV
- Features of semiconductor devices: high voltage
- Gate - emitter voltage: ±20V
- Gate charge: 53нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Power dissipation: 100W
- Pulsed collector current: 105A
- Topology: H-bridge
- Turn-off time: 1.066µs
- Turn-on time: 217ns
- Type of transistor: IGBT