Транзистор: IGBT; BiMOSFET™; 3кВ; 22А; 150Вт; SMPD Технические параметры
- Case: SMPD
- Collector current: 22A
- Collector-emitter voltage: 3kV
- Features of semiconductor devices: high voltage
- Gate - emitter voltage: ±20V
- Gate charge: 110нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Power dissipation: 150W
- Pulsed collector current: 165A
- Technology: BiMOSFET™
- Topology: H-bridge
- Turn-off time: 1.87µs
- Turn-on time: 743ns
- Type of transistor: IGBT