Транзистор: IGBT; BiMOSFET™; 1,2кВ; 40А; 400Вт; SMPD Технические параметры
- Case: SMPD
- Collector current: 40A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1.7V
- Collector-emitter voltage: 1.2kV
- Collector-Emitter Voltage (Vceo): 600V
- Continuous Collector Current (Ic): 223A
- Emitter Leakage Current: 200nA
- Gate - emitter voltage: ±20V
- Gate charge: 270нКл
- Gate Emitter Voltage (Vge): 20V
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Mounting Type: SMD
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: SMPD
- Packaging: Tube
- Phases: Single
- Ports: 24
- Power dissipation: 400W
- Power Dissipation (Pd): 625W
- Pulsed collector current: 440A
- Reflow Temperature Max.: 260°C
- Technology: XPT™
- Turn-off time: 265ns
- Turn-on time: 122ns
- Type of transistor: IGBT
