Транзистор: IGBT; BiMOSFET™; 650В; 295А; 1,2кВт; SMPD Технические параметры
- Case: SMPD
- Collector current: 295A
- Collector-emitter voltage: 650V
- Gate - emitter voltage: ±20V
- Gate charge: 553нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Power dissipation: 1.2kW
- Pulsed collector current: 1.2kA
- Technology: XPT™
- Turn-off time: 346ns
- Turn-on time: 119ns
- Type of transistor: IGBT