Транзистор: IGBT; BiMOSFET™; 600В; 120А; 625Вт; SMPD Технические параметры
- Case: SMPD
- Collector current: 120A
- Collector-emitter voltage: 600V
- Gate - emitter voltage: ±20V
- Gate charge: 315нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Power dissipation: 625W
- Pulsed collector current: 1kA
- Technology: XPT™
- Turn-off time: 395ns
- Turn-on time: 140ns
- Type of transistor: IGBT