Транзистор: IGBT; BiMOSFET™; 600В; 68А; 400Вт; SMPD Технические параметры
- Case: SMPD
- Collector current: 68A
- Collector-emitter voltage: 600V
- Gate - emitter voltage: ±20V
- Gate charge: 143нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Power dissipation: 400W
- Pulsed collector current: 440A
- Technology: XPT™
- Turn-off time: 350ns
- Turn-on time: 92s
- Type of transistor: IGBT