Транзистор: IGBT; BiMOSFET™; 600В; 180А; 1кВт; SMPD Технические параметры
- Case: SMPD
- Collector current: 180A
- Collector-emitter voltage: 600V
- Gate - emitter voltage: ±20V
- Gate charge: 585нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Power dissipation: 1kW
- Pulsed collector current: 1kA
- Technology: PT
- Turn-off time: 595ns
- Turn-on time: 107ns
- Type of transistor: IGBT