Транзистор: IGBT; BiMOSFET™; 1,2кВ; 105А; 400Вт; SMPD Технические параметры
- Case: SMPD
- Collector current: 105A
- Collector-emitter voltage: 1.2kV
- Gate - emitter voltage: ±20V
- Gate charge: 420нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- Power dissipation: 400W
- Pulsed collector current: 700A
- Technology: PT
- Turn-off time: 1365ns
- Turn-on time: 105ns
- Type of transistor: IGBT
