Транзистор: N-MOSFET; 250В; 100А; 445Вт; DE475 Технические параметры
- Case: DE475
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: 250V
- Features of semiconductor devices: thrench gate power mosfet
- Gate charge: 255нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 0.017Ω
- Power dissipation: 445W
- Type of transistor: N-MOSFET
