Транзистор: N-MOSFET; полевой; 40В; 11А; 2Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 11A
- Drain-source voltage: 40V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 10.5нКл
- Gate-source voltage: ±20V
- Manufacturer: AOS
- Mounting: SMD
- On-State Resistance: 11.5mΩ
- Polarisation: unipolar
- Power dissipation: 2W
- Type of transistor: N-MOSFET