Транзистор: N-MOSFET; полевой; 60В; 10,5А; 2Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 10.5A
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 7нКл
- Gate-source voltage: ±20V
- Manufacturer: AOS
- Mounting: SMD
- On-State Resistance: 9.8mΩ
- Polarisation: unipolar
- Power dissipation: 2W
- Type of transistor: N-MOSFET