Транзистор: N-MOSFET; полевой; 20В; 5,2А; 0,9Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 5.2A
- Drain-source voltage: 20V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 10нКл
- Gate-source voltage: ±8V
- Manufacturer: AOS
- Mounting: SMD
- On-State Resistance: 22mΩ
- Polarisation: unipolar
- Power dissipation: 0.9W
- Type of transistor: N-MOSFET