Транзистор: N-MOSFET; полевой; 600В; 0,03А; 0,89Вт; SOT23A-3 Технические параметры
- Case: SOT23A-3
- Channel kind: enhanced
- Drain current: 0.03A
- Drain-source voltage: 600V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 0.9нКл
- Gate-source voltage: ±20V
- Manufacturer: AOS
- Mounting: SMD
- On-State Resistance: 500Ω
- Polarisation: unipolar
- Power dissipation: 0.89W
- Type of transistor: N-MOSFET