Транзистор: N-MOSFET; TRENCH POWER LV; полевой; 40В; 23А; Idm:120А Технические параметры
- Case: DFN3.3x3.3
- Channel kind: enhanced
- Drain current: 23A
- Drain-source voltage: 40V
- Gate charge: 29нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: YANGJIE TECHNOLOGY
- Mounting: SMD
- On-State Resistance: 10mΩ
- Polarisation: unipolar
- Power dissipation: 40W
- Pulsed drain current: 120A
- Technology: TRENCH POWER LV
- Type of transistor: N-MOSFET
