Транзистор: N-MOSFET; SPLIT GATE TRENCH; полевой; 60В; 50А; 38Вт Технические параметры
- Case: DFN5060-8
- Channel kind: enhanced
- Drain current: 50A
- Drain-source voltage: 60V
- Gate charge: 67нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: YANGJIE TECHNOLOGY
- Mounting: SMD
- On-State Resistance: 5mΩ
- Polarisation: unipolar
- Power dissipation: 38W
- Pulsed drain current: 320A
- Technology: SPLIT GATE TRENCH
- Type of transistor: N-MOSFET
