Транзистор: N-MOSFET; SPLIT GATE TRENCH; полевой; 60В; 34А; 30Вт Технические параметры
- Case: DFN5060-8
- Channel kind: enhanced
- Drain current: 34A
- Drain-source voltage: 60V
- Gate charge: 31нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: YANGJIE TECHNOLOGY
- Mounting: SMD
- On-State Resistance: 12mΩ
- Polarisation: unipolar
- Power dissipation: 30W
- Pulsed drain current: 160A
- Technology: SPLIT GATE TRENCH
- Type of transistor: N-MOSFET
