Транзистор: N-MOSFET; полевой; 30В; 4А; 1,8Вт; SC70 Технические параметры
- #Promotion: vishay_201906
- Case: SC70
- Channel kind: enhanced
- Drain current: 4A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 4нКл
- Gate-source voltage: ±12V
- Kind of package: tape
- Manufacturer: Vishay
- Mounting: SMD
- On-State Resistance: 0.045Ω
- Polarisation: unipolar
- Power dissipation: 1.8W
- Type of transistor: N-MOSFET