Транзистор: N-MOSFET; полевой; 60В; 0,19А; 0,18Вт; SC70 Технические параметры
- #Promotion: vishay_201906
- Case: SC70
- Channel kind: enhanced
- Drain current: 0.19A
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 0.4нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Vishay
- Mounting: SMD
- On-State Resistance: 2.5Ω
- Polarisation: unipolar
- Power dissipation: 0.18W
- Type of transistor: N-MOSFET