Транзистор: N-MOSFET; TRENCH POWER MV; полевой; 60В; 0,272А; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 0.272A
- Drain-source voltage: 60V
- Gate charge: 2.4нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: YANGJIE TECHNOLOGY
- Mounting: SMD
- On-State Resistance: 3Ω
- Polarisation: unipolar
- Power dissipation: 0.35W
- Pulsed drain current: 1.5A
- Technology: TRENCH POWER MV
- Type of transistor: N-MOSFET