Транзистор: N-MOSFET; полевой; 40В; 250А; 375Вт; TO220SM Технические параметры
- Case: TO220SM
- Drain current: 250A
- Drain-source voltage: 40V
- Gate charge: 227нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 980µΩ
- Polarisation: unipolar
- Power dissipation: 375W
- Type of transistor: N-MOSFET