Транзистор: N-MOSFET; полевой; 100В; 9А; 50Вт; DPAK Технические параметры
- Case: DPAK
- Drain current: 9A
- Drain-source voltage: 100V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Kind of package: bulk
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 130mΩ
- Polarisation: unipolar
- Power dissipation: 50W
- Technology: SuperMesh™
- Type of transistor: N-MOSFET
