Транзистор: N-MOSFET; полевой; 60В; 0,19А; 0,14Вт; SOT23 Технические параметры
- Case: SOT23
- Drain current: 0.19A
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 0.4нКл
- Gate-source voltage: ±20V
- Kind of package: reel
- Manufacturer: Vishay
- Mounting: SMD
- On-State Resistance: 2Ω
- Polarisation: unipolar
- Transistor type: N-MOSFET
- Мощность: 0.14W