Транзистор: N-MOSFET; полевой; 60В; 300мА; 500мВт; PG-SOT-363 Технические параметры
- Automotive Qualification Standard: AEC-Q101
- Case: PG-SOT-363
- Configuration: Dual
- Continuous Drain Current (Id): 300mA
- Drain current: 300mA
- Drain-source voltage: 60V
- Drain-Source Voltage (Vds): 60V
- Fall Time: 3.1ns
- Gate-Source Voltage: 20V
- Gate-source voltage: ±20V
- Height Units: 6
- Manufacturer: Infineon
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 3Ω
- On-State Resistance: 4Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-363
- Packaging: Tape & Reel
- Polarisation: unipolar
- Power Dissipation (Pd): 500mW
- Rise Time: 3.3ns
- Technology: OptiMOS™
- Transistor Polarity: N-Channel
- Transistor type: N-MOSFET
- Turn-OFF Delay Time: 5.5ns
- Turn-ON Delay Time: 3ns
- Мощность: 500mW
