Транзистор: N-MOSFET; полевой; 900В; 11А; 230Вт; TO247 Технические параметры
- Case: TO247
- Continuous Drain Current (Id): 11A
- Drain current: 11A
- Drain-source voltage: 900V
- Drain-Source Voltage (Vds): 900V
- Fall Time: 55ns
- Gate-Source Voltage: 30V
- Height Units: 3
- Housing: TO247
- Manufacturer: STM
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 720mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-247
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 230W
- Rise Time: 20ns
- Transistor Polarity: N-Channel
- Transistor type: МОП n-канальный
- Turn-OFF Delay Time: 88ns
- Turn-ON Delay Time: 31ns
- Мощность: 230W
- Ток стока: 11A
