Транзистор: МОП n-канальный; полевой; 800В; 2,5А; TO220FP Технические параметры
- Case: TO220FP
- Continuous Drain Current (Id): 2.5A
- Drain current: 2.5A
- Drain-source voltage: 800V
- Drain-Source Voltage (Vds): 800V
- Fall Time: 40ns
- Gate-Source Voltage: 30V
- Height Units: 3
- Housing: TO220FP
- Manufacturer: STM
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 4.5Ω
- On-State Resistance: 4500MΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220FP
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 25W
- Rise Time: 27ns
- Transistor Polarity: N-Channel
- Transistor type: МОП n-канальный
- Turn-OFF Delay Time: 36ns
- Turn-ON Delay Time: 17ns
- Сопротивление в открытом состоянии: 4.5Ω
- Ток стока: 2.5A
