Транзистор: IGBT; NPT; 1,2кВ; 50А; 625Вт; TO264 Технические параметры
- Case: TO264
- Collector current: 50A
- Collector-emitter voltage: 1.2kV
- Gate - emitter voltage: ±30V
- Gate charge: 340нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 625W
- Pulsed collector current: 150A
- Technology: NPT
- Turn-off time: 303ns
- Turn-on time: 77ns
- Type of transistor: IGBT