Транзистор: IGBT; NPT; 650В; 100А; 892Вт; T-Max Технические параметры
- Case: T-Max
- Collector current: 100A
- Collector-emitter voltage: 650V
- Gate - emitter voltage: ±30V
- Gate charge: 312нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 892W
- Pulsed collector current: 400A
- Technology: POWER MOS 8®
- Turn-off time: 336ns
- Turn-on time: 105ns
- Type of transistor: IGBT