Транзистор: IGBT; NPT; 1,2кВ; 85А; 962Вт; TO264 Технические параметры
- Case: TO264
- Collector current: 85A
- Collector-emitter voltage: 1.2kV
- Gate - emitter voltage: ±30V
- Gate charge: 490нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 962W
- Pulsed collector current: 340A
- Technology: POWER MOS 8®
- Turn-off time: 445ns
- Turn-on time: 113ns
- Type of transistor: IGBT