Транзистор: IGBT; PT; 600В; 100А; 1041Вт; T-Max Технические параметры
- Case: T-Max
- Collector current: 100A
- Collector-emitter voltage: 600V
- Gate - emitter voltage: ±20V
- Gate charge: 280нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 1041W
- Pulsed collector current: 330A
- Technology: PT
- Turn-off time: 233ns
- Turn-on time: 69ns
- Type of transistor: IGBT