Транзистор: IGBT; PT; 900В; 80А; 625Вт; TO264 Технические параметры
- Case: TO264
- Collector current: 80A
- Collector-emitter voltage: 900V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 200нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 625W
- Pulsed collector current: 239A
- Technology: PT
- Turn-off time: 320ns
- Turn-on time: 49ns
- Type of transistor: IGBT