Транзистор: IGBT; Field Stop; 600В; 93А; 536Вт; D3PAK Технические параметры
- Case: D3PAK
- Collector current: 93A
- Collector-emitter voltage: 600V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 485нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: SMD
- Power dissipation: 536W
- Pulsed collector current: 225A
- Technology: Field Stop
- Turn-off time: 485ns
- Turn-on time: 95ns
- Type of transistor: IGBT