Транзистор: IGBT; PT; 600В; 68А; 520Вт; TO264 Технические параметры
- Case: TO264
- Collector current: 68A
- Collector-emitter voltage: 600V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 198нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 520W
- Pulsed collector current: 202A
- Technology: PT
- Turn-off time: 304ns
- Turn-on time: 46ns
- Type of transistor: IGBT