Транзистор: IGBT; PT; 600В; 96А; 833Вт; T-Max Технические параметры
- Case: T-Max
- Collector current: 96A
- Collector-emitter voltage: 600V
- Gate - emitter voltage: ±20V
- Gate charge: 210нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 833W
- Pulsed collector current: 250A
- Technology: PT
- Turn-off time: 219ns
- Turn-on time: 84ns
- Type of transistor: IGBT