Транзистор: IGBT; PT; 900В; 64А; 500Вт; T-Max Технические параметры
- Case: T-Max
- Collector current: 64A
- Collector-emitter voltage: 900V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 162нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 500W
- Pulsed collector current: 193A
- Technology: PT
- Turn-off time: 352ns
- Turn-on time: 44ns
- Type of transistor: IGBT