Транзистор: IGBT; PT; 1,2кВ; 54А; 625Вт; T-Max Технические параметры
- Case: T-Max
- Collector current: 54A
- Collector-emitter voltage: 1.2kV
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 185нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 625W
- Pulsed collector current: 170A
- Technology: PT
- Turn-off time: 230ns
- Turn-on time: 47ns
- Type of transistor: IGBT