Транзистор: IGBT; PT; 600В; 44А; 337Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 44A
- Collector-emitter voltage: 600V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 128нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 337W
- Pulsed collector current: 130A
- Technology: PT
- Turn-off time: 208ns
- Turn-on time: 29ns
- Type of transistor: IGBT