Транзистор: N-MOSFET; полевой; 500В; 27А; Idm: 135А; 625Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 27A
- Drain-source voltage: 500V
- Gate charge: 170нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 130mΩ
- Polarisation: unipolar
- Power dissipation: 625W
- Pulsed drain current: 135A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET