Транзистор: IGBT; PT; 900В; 50А; 543Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 50A
- Collector-emitter voltage: 900V
- Gate - emitter voltage: ±20V
- Gate charge: 145нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 543W
- Pulsed collector current: 160A
- Technology: PT
- Turn-off time: 215ns
- Turn-on time: 43ns
- Type of transistor: IGBT