Транзистор: IGBT; PT; 600В; 62А; 543Вт; T-Max Технические параметры
- Case: T-Max
- Collector current: 62A
- Collector-emitter voltage: 600V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±20V
- Gate charge: 135нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 543W
- Pulsed collector current: 160A
- Technology: PT
- Turn-off time: 160ns
- Turn-on time: 49ns
- Type of transistor: IGBT