Транзистор: IGBT; PT; 600В; 36А; 290Вт; D3PAK Технические параметры
- Case: D3PAK
- Collector current: 36A
- Collector-emitter voltage: 600V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 102нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: SMD
- Power dissipation: 290W
- Pulsed collector current: 109A
- Technology: PT
- Turn-off time: 262ns
- Turn-on time: 29ns
- Type of transistor: IGBT