Транзистор: N-MOSFET; полевой; 600В; 23А; Idm: 124А; 624Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 23A
- Drain-source voltage: 600V
- Gate charge: 165нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 190mΩ
- Polarisation: unipolar
- Power dissipation: 624W
- Pulsed drain current: 124A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET