Транзистор: IGBT; PT; 900В; 36А; 417Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 36A
- Collector-emitter voltage: 900V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 110нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 417W
- Pulsed collector current: 110A
- Technology: PT
- Turn-off time: 190ns
- Turn-on time: 29ns
- Type of transistor: IGBT