Транзистор: IGBT; PT; 1,2кВ; 33А; 417Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 33A
- Collector-emitter voltage: 1.2kV
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 110нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 417W
- Pulsed collector current: 90A
- Technology: PT
- Turn-off time: 200ns
- Turn-on time: 26ns
- Type of transistor: IGBT