Транзистор: N-MOSFET; полевой; 1кВ; 12А; Idm: 68А; 625Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 12A
- Drain-source voltage: 1kV
- Gate charge: 150нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 700mΩ
- Polarisation: unipolar
- Power dissipation: 625W
- Pulsed drain current: 68A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET