Транзистор: IGBT; NPT; 1,2кВ; 18А; 250Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 18A
- Collector-emitter voltage: 1.2kV
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±30V
- Gate charge: 105нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 250W
- Pulsed collector current: 45A
- Technology: NPT
- Turn-off time: 137ns
- Turn-on time: 21ns
- Type of transistor: IGBT